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1 of 14 optimum technology matching? applied gaas hbt ingap hbt gaas mesfet sige bicmos si bicmos sige hbt gaas phemt si cmos si bjt gan hemt functional block diagram rf micro devices?, rfmd?, optimum technology matching?, enabling wireless connectivity?, powerstar?, polaris? total radio? and ultimateblue? are trademarks of rfmd, llc. bluetooth is a trade- mark owned by bluetooth sig, inc., u.s.a. and licensed for use by rfmd. all other trade names, trademarks and registered tradem arks are the property of their respective owners. ?2012, rf micro devices, inc. product description 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or customerservice@rfmd.com . ordering information bifet hbt ldmos rf in vgq pin 1 (cut) rf out vdq pin 2 gnd base rf3933 90w gan wide-band power amplifier the rf3933 is a 48v, 90w high power discrete amplifier designed for commercial wireless infrastructure, cellular and wi max infrastructure, industrial/scien- tific/medical and general purpose broadb and amplifier applications. using an advanced high power density gallium nitride (gan) semiconductor process, these high-performance amplifiers achieve high ef ficiency and flat gain over a broad fre- quency range in a single amplifier design. the rf3933 is an unmatched gan tran- sistor packaged in a hermetic, flanged ceramic package. this package provides excellent thermal stability through the use of advanced heat sink and power dissi- pation technologies. ease of integration is accomplished through the incorporation of simple, optimized matching networks external to the package that provide wide- band gain and power performance in a single amplifier. features ? broadband operation dc to 3.5ghz ? advanced gan hemt technology ? advanced heat sink technology ? small signal gain = 21db at 0.9ghz ? 48v operation typical performance: ? output power 90w at p3db ? drain efficiency 75% at p3db ? -40c to 85c operation applications ? commercial wireless infrastructure ? cellular and wimax infrastructure ? civilian and military radar ? general purpose broadband amplifiers ? public mobile radios ? industrial, scientific and medical rf3933s2 2-piece sample bag rf3933sb 5-piece bag rf3933sq 25-piece bag rf3933sr 100 pieces on 7? short reel rf3933tr7 750 pieces on 7? reel rf3933pck-411 fully assembled evaluation board optimized for 2.14ghz; 48v ds120306 ? package: hermetic 2-pin flanged ceramic
2 of 14 rf3933 ds120306 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or customerservice@rfmd.com . absolute maximum ratings parameter rating unit drain voltage (v d )150v gate voltage (v g )-8 to +2v gate current (i g )54ma operational voltage 65 v ruggedness (vswr) 10:1 storage temperature range -55 to +125 c operating temperature range (t c )-40 to +85 c operating junction temperature (t j )200 c human body model class 1a mttf (t j < 200 c, 95% confidence limits)* 3 x 10 6 hours thermal resistance, r th (junction to case) measured at t c = 85c, dc bias only 2.1 c/w * mttf - median time to failure for wear-out failure mode (30% i dss degradation) which is determined by the technology process reliability. refer to product qualification report for fit(random) failure rate. operation of this device beyond any one of these limits may cause permanent damage. for reliable continuous operation, the dev ice voltage and current must not exceed the maximum operating values. bias conditions should also satisfy the following expression: p diss <(t j - t c )/r th j-c and t c = t case parameter specification unit condition min. typ. max. recommended operating conditions drain voltage (v dsq )28 48v gate voltage (v gsq ) -4.5 -3.7 -2.5 v drain bias current 300 ma frequency of operation dc 3500 mhz capacitance c rss 7pfv g = -8v, v d = 0v c iss 30 pf c oss 21 pf dc functional test i g (off) ? gate leakage 2 ma v g = -8v, v d = 0v i d (off) ? drain leakage 2.5 ma v g = -8v, v d = 48v v gs (th) ? threshold voltage -4.2 v v d = 48v, i d = 20ma v ds (on) ? drain voltage at high current 0.25 v v g = 0v, i d = .5a rf functional test [1], [2] v gs (q) -3.4 v v d = 48v, i d =300ma gain 10 12 db cw, p out = 49.5dbm, f = 2140mhz drain efficiency 55 60 % cw, p out = 49.5dbm, f = 2140mhz input return loss -10 -12 db cw, p out = 49.5dbm, f = 2140mhz caution! esd sensitive device. exceeding any one or a combination of the absolute maximum rating conditions may cause permanent damage to the device. ex tended application of absolute maximum rating conditions to the device may reduce device reliability. specified typical perfor- mance or functional operation of the devi ce under absolute maximum rating condi- tions is not implied. the information in this publication is believed to be accurate and reliable. however, no responsibility is assumed by rf micro devices, inc. ("rfmd") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. no license is granted by implication or otherwise under any patent or patent rights of rfmd. rfmd reserves the right to change component circuitry, recommended appli- cation circuitry and specifications at any time without prior notice. rfmd green: rohs compliant per eu directive 2002/95/ec, halogen free per iec 61249-2-21, < 1000ppm each of antimony trioxide in polymeric materials and red phosphorus as a fl ame retardant, and <2% antimony in solder.
3 of 14 rf3933 ds120306 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or customerservice@rfmd.com . parameter specification unit condition min. typ. max. rf typical performance [1], [2] small signal gain 21 db cw, f = 900mhz small signal gain 13.5 db cw, f = 2140mhz output power at p3db 49.5 dbm cw, f = 900mhz output power at p3db 49.5 dbm cw, f = 2140mhz drain efficiency at p3db 75 % cw, f = 900mhz drain efficiency at p3db 75 % cw, f = 2140mhz [1] test conditions: cw operation, v dsq = 48v, i dq = 300ma, t= 25c. [2] performance in a standard tuned test fixture.
4 of 14 rf3933 ds120306 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or customerservice@rfmd.com . typical performance in standard 2.14 ghz tuned test fixture (cw, t = 25c, unless otherwise noted) -16 -15 -14 -13 -12 -11 -10 -9 -8 -7 -6 5 6 7 8 9 10 11 12 13 14 15 2110 2120 2130 2140 2150 2160 2170 2180 input return loss (db) gain (db) frequency (mhz) gain/irl vs. frequency, pout = 49.5dbm (cw, vd = 48v, idq = 300ma) gain irl fixed tuned test circuit 50 52 54 56 58 60 62 64 66 68 70 2100 2110 2120 2130 2140 2150 2160 2170 2180 drain e?ciency (%) frequency (mhz) drain e?ciency vs. frequency, pout = 49.5dbm (cw, vd = 48v, idq = 300ma) e? fixed tuned test circuit 10 11 12 13 14 15 16 17 18 30 32 34 36 38 40 42 44 46 48 50 gain (db) output power (dbm) gain vs. output power (f = 2140mhz) (pulsed 10% duty cycle, 10us, vd = 48v, idq = 300ma) gain -40c gain 25c gain 85c 5 10 15 20 25 30 35 40 45 50 55 0 5 30 32 34 3 38 40 42 44 4 48 50 drain e?ciency (%) output power (dbm) e?ciency vs. output power (f = 2140mhz) (pulsed 10% duty cycle, 10us, vd = 48v, idq = 300ma) e? -40c e? 25c e? 85c -1 -14 -12 -10 -8 - 30 32 34 3 38 40 42 44 4 48 50 irl, input return loss (db) output power (dbm) input return loss vs. output power (f = 2140mhz) (pulsed 10% duty cycle, 10us, vd = 48v, idq = 300ma) irl -40c irl 25c irl 85c -10 -9 -8 - - -5 -4 -3 -2 -1 0 8 9 10 11 12 13 14 15 1 2110 2120 2130 2140 2150 210 210 input return loss (db) gain (db) frequency (mhz) small signal performance vs. frequency, pout = 30dbm (vd = 48v, idq = 300ma) gain irl fixed tuned test circuit
5 of 14 rf3933 ds120306 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or customerservice@rfmd.com . 0 10 20 30 40 50 60 70 2 4 6 8 10 12 14 16 30 35 40 45 50 drain e?ciency (%) gain (db) pout, output power (dbm) gain/ e?ciency vs. pout, f = 2140mhz (cw, vd = 48v, idq = 300ma) gain e? 0 10 20 30 40 50 60 70 0 2 4 6 8 10 12 14 16 30 35 40 45 50 drain e?ciency (%) gain (db) pout, output power (dbm) gain/ e?ciency vs. pout, f = 2140mhz (pulsed 10% duty cycle, 10us, vd = 48v, idq = 300ma) gain drain e? 12.8 13 13.2 13.4 13.6 13.8 14 14.2 14.4 14.6 14.8 15 15.2 0 0 1 0 1 1 gain (db) pout, output power (w-pep) gain vs. pout (2-tone 1mhz separaon, vd = 48v, idq varied, fc = 2140mhz) 260ma 300ma 330ma 370ma -45 -40 -35 -30 -25 -20 0 0 1 0 1 1 imd3, intermodulaon distoron (dbc) pout, output power (w-pep) imd3 vs. pout (2-tone 1mhz separaon, vd = 48v, idq varied, fc = 2140mhz) 260ma 300ma 330ma 370ma -70 -60 -50 -40 -30 -20 -10 0 0 0 1 0 1 1 intermodulaon distoron (imd - dbc) pout, output power (w- pep) imd vs. output power (vd = 48v, idq = 300ma, f1 = 2139.5mhz, f2 = 2140.5mhz) -imd3 imd3 -imd5 imd5 -imd7 imd7
6 of 14 rf3933 ds120306 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or customerservice@rfmd.com . typical performance in standard 900mhz tuned test fixture (cw, t = 25c, unless otherwise noted) 15 16 17 18 19 20 21 22 23 24 25 30 32 34 36 38 40 42 44 46 48 50 52 gain (db) output power (dbm) gain vs. output power (f = 900mhz) (pulsed 10% duty cycle, 10us, vd = 48v, idq = 300ma) gain 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 30 32 34 36 38 40 42 44 46 48 50 52 drain e?ciency (%) output power (dbm) e?ciency vs. output power (f = 900mhz) (pulsed 10% duty cycle, 10us, vd = 48v, idq = 300ma) drain e? -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 30 32 34 36 38 40 42 44 46 48 50 52 irl, input return loss (db) output power (dbm) input return loss vs. output power (f = 900mhz) (pulsed 10% duty cycle, 10us, vd = 48v, idq = 300ma) irl -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 13 14 15 16 17 18 19 20 21 22 23 880 890 900 910 920 input return loss (db) gain (db) frequency (mhz) small signal performance vs. frequency, pout = 30dbm (vd = 48v, idq = 300ma) gain irl fixed tuned test circuit -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 11 12 13 14 15 16 17 18 19 20 21 880890900910920 input return loss (db) gain (db) frequency (mhz) gain/irl vs. frequency, pout = 49.5dbm (cw, vd = 48v, idq = 300ma) gain irl fixed tuned test circuit 65 67 69 71 73 75 880 890 900 910 920 drain e?ciency (%) frequency (mhz) drain e?ciency vs. frequency, pout = 49.5dbm (cw, vd = 48v, idq = 300ma) e? fixed tuned test circuit
7 of 14 rf3933 ds120306 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or customerservice@rfmd.com . 0 10 20 30 40 50 60 70 80 14 15 16 17 18 19 20 21 22 30 35 40 45 50 55 drain e?ciency (%) gain (db) pout, output power (dbm) gain/ e?ciency vs. pout, f = 900mhz (cw, vd = 48v, idq = 300ma) gain e? 0 10 20 30 40 50 60 70 80 15 16 17 18 19 20 21 22 23 30 35 40 45 50 55 drain e?ciency (%) gain (db) pout, output power (dbm) gain/ e?ciency vs. pout, f = 900mhz (pulsed 10% duty cycle, 10us, vd = 48v, idq = 300ma) gain drain e? -45 -40 -35 -30 -25 -20 0 0 1 0 1 1 imd3, intermodulaon distoron (dbc) pout, output power (w-pep) imd3 vs. pout (2-tone 1mhz separaon, vd = 48v, idq varied, fc = 900mhz) 260ma 300ma 330ma 370ma 20 20.2 20.4 20.6 20.8 21 21.2 21.4 21.6 21.8 22 0 0 1 0 1 1 gain (db) pout, output power (w-pep) gain vs. pout (2-tone 1mhz separaon, vd = 48v, idq varied, fc = 900mhz) 260ma 300ma 330ma 370ma -70 -60 -50 -40 -30 -20 -10 0 0 0 1 0 1 1 intermodulaon distoron (imd - dbc) pout, output power (w- pep) imd vs. output power (vd = 48v, idq = 300ma, f1 = 899.5mhz, f2 = 900.5mhz) -imd3 imd3 -imd5 imd5 -imd7 imd7
8 of 14 rf3933 ds120306 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or customerservice@rfmd.com . package drawing pin-out table pin function description 1 gate gate - vg rf output 2 drain drain - vd rf output 3 source source - ground base
9 of 14 rf3933 ds120306 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or customerservice@rfmd.com . bias instruction for rf3933 evaluation board esd sensitive material. please use proper esd precau tions when handling devices of evaluation board. evaluation board requires additional external fan cooling. connect all supplies before powering up the evaluation board. 1. connect rf cables at rf in and rf out . 2. connect ground to the ground supply terminal, and ensure that both the v g and v d grounds are also connected to this ground supply terminal. 3. apply -8v to v g . 4. apply 48v to v d . 5. increase v g until drain current reaches 300ma or desired bias point. 6. turn on the rf input.
10 of 14 rf3933 ds120306 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or customerservice@rfmd.com . 2.14ghz evaluation board schematic 2.14ghz evaluation board bill of materials component value manufacturer part number c1 10pf atc atc800a100jt c2, c10, c11, c15 33pf atc atc800a330jt c3,c14 0.1 ? f murata grm32nr72a104ka01l c4,c13 4.7 ? f murata grm55er72a475ka01l c5 100 ? f panasonic ECE-V1HA101UP c6 1.5pf atc atc800a1r5bt c7, c8 0.5pf atc atc800a0r5bt c9 2.7pf atc atc800a2r7bt c12 100 ? f panasonic eev-tg2a101m c17 1.8pf atc atc800a1r8bt c19 1.0pf atc atc800a1r0bt r1 10 ? panasonic erj-8geyj100v c16, c18 not used - - pcb ro4350, 0.030" thick dielectric rogers -

11 of 14 rf3933 ds120306 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or customerservice@rfmd.com . 2.14ghz evaluation board layout device impedances device impedances reported are the measured evaluation board impedances chosen for a tradeoff of efficiency, peak power, and linear performance across the entire frequency bandwidth. frequency z source ( ? ) z load ( ?? 2110mhz 2.05 - j3.67 4.8 - j0.08 2140mhz 1.92 - j3.44 4.82 + j0.45 2170mhz 1.88 - j3.11 4.83 + j1.05
12 of 14 rf3933 ds120306 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or customerservice@rfmd.com . 900mhz evaluation board schematic 900mhz evaluation board bill of materials component value manufacturer part number c1, c2, c10, c11 68pf atc atc800a680jt c3, c14 0.1 ? f murata grm32nr72a104ka01l c4, c13 4.7 ? f murata grm55er72a475ka01l c6 6.8pf atc atc800a6r8jt c7 18pf atc atc800a180jt c8 12pf atc atc800a120jt c9 4.7pf atc atc800a4r7bt c12 330 ? f panasonic eeu-fc2a331 c5 100 ? f panasonic ECE-V1HA101UP r1 10 ? panasonic erj-8geyj100v
13 of 14 rf3933 ds120306 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or customerservice@rfmd.com . 900mhz evaluation board layout device impedances device impedances reported are the measured evaluation board impedances chosen for a tradeoff of efficiency, peak power, and linear performance across the entire frequency bandwidth. frequency z source ( ? ) z load ( ?? 880mhz 2.05 + j4.09 6.82 + j6.34 900mhz 2.12 + j4.15 7.18 + j5.82 920mhz 1.95 + j3.92 6.93 + j5.42
14 of 14 rf3933 ds120306 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or customerservice@rfmd.com . device handling/envir onmental conditions gan hemt devices are esd sensitive materials. please use proper esd precautions when handling devices or evaluation boards. gan hemt capacitances the physical structure of the gan hemt results in three terminal capacitors similar to other fet technologies. these capacitances exist across all three terminals of the device. the physical manufactured characteristics of the device determine the value of the c ds (drain to source), c gs (gate to source) and c gd (gate to drain). these capacitances change value as the terminal voltages are varied. rfmd presents the three terminal capacitances measured with the gate pinched off (v gs = -8v) and zero volts applied to the drain. during the measurement process, the parasitic capacitances of the package that holds the amplifier is removed through a calibration step. any internal matching is included in the termin al capacitance measurements. the capacitance values pre- sented in the typical characteristics table of the device represent the measured input (c iss ), output (c oss ), and reverse (c rss ) capacitance at the stated bias vo ltages. the relationship to three terminal capacitances is as fol- lows: c iss = c gd + c gs c oss = c gd + c ds c rss = c gd dc bias the gan hemt device is a depletion mode high electron mobility transistor (hemt). at zero volts v gs the drain of the device is saturated and uncontrolled drain current will destroy the transist or. the gate voltage must be taken to a potential lower than the source voltage to pinch off th e device prior to applying the drain voltage, taking care not to exceed the gate voltage maximu m limits. rfmd recommends applying v gs = -5v before applying any v ds . rf power transistor performance capabi lities are determined by the applied quiescent drain current. this drain current can be adjusted to trade off power, linearity, and efficiency characteristics of the device. the recom- mended quiescent drain current (i dq ) shown in the rf typical performance ta ble is chosen to best represent the operational characteristics for this device, considering manufacturing variations and expected performance. the user may choose alternate conditions for bias ing this device based on performance tradeoffs. mounting and thermal considerations the thermal resistance provided as r th (junction to case) represents only the packaged device thermal charac- teristics. this is measured using ir microscopy captur ing the device under test te mperature at the hottest spot of the die. at the same time, the package temperature is measured using a thermocouple touching the backside of the die embedded in the device heatsink but sized to prevent the measurement system from impacting the results. knowing the dissipated power at the time of the measurement, the thermal resistance is calculated. in order to achieve the advertised mttf, proper heat remo val must be considered to maintain the junction at or below the maximum of 200c. proper thermal design includes considerat ion of ambient temperature and the thermal resistance from ambient to the back of the package including he atsinking systems and air flow mecha- nisms. incorporating the dissipated dc po wer, it is possible to calculate the junction temperature of the device.

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